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Keep current on the latest products, new suppliers, and technical articles of interest to you. (See Topics) |
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude. Search by Specification | Learn More about RF Amplifiers
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
Power amplifiers deliver a specific amount of AC power to a load. They are used in audio frequency and radio frequency applications. Learn More about Power Amplifiers
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
High voltage power supplies use linear technology to provide one or more DC outputs at voltage levels of hundreds or thousands of volts. Search by Specification | Learn More about High Voltage Power Supplies
RF generators and high frequency power supplies provide the power required for plasma generation, induction heating, and radar or communications applications. Search by Specification | Learn More about RF Generators
Amplifier and comparator chips are board-level components for amplifying voltage, current, or power. Search by Specification | Learn More about Amplifier and Comparator Chips
...stability in power amplifiers. An IGBT transistor combines MOSFET gate drive attributes with bipolar transistor high current and low saturation voltage capabilities. The insulated (or isolated) gate bipolar transistor (IGBT) transistor is typically used... Learn More about Specialty Transistors
RF waveguide amplifiers accept a varying input signal and produce an output signal that varies in the same way, but with a larger amplitude. Learn More about RF Waveguide Amplifiers
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
...effect transistor (FET). They draw virtually no power from an input signal, overcoming a major disadvantage of the junction transistor. An n-channel FET consists of a bar (channel) of n-type semiconductor material that passes between and makes contact... Search by Specification | Learn More about Transistors
High voltage diodes are designed for use in high-voltage applications. Search by Specification | Learn More about High Voltage Diodes
DC power supplies accept an input power and output the desired form of DC power. Common types of DC power supplies include linear power supplies, switching power supplies, DC-DC converters, and silicon controlled rectifier (SCR) type power Search by Specification | Learn More about DC Power Supplies
Power supplies are devices that produce AC or DC power. This grouping includes current sources, DC power supplies, AC-DC adapters, DC-DC converters, AC power sources, and DC-AC inverters. Search by Specification | Learn More about Power Supplies
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Advanced Power Electronics Corp goes Green Advanced Power Electronics Corp. USA
New GreenFET Products Announced Advanced Power Electronics Corp. USA
Power MOSFETs in PMPAK5x6 Advanced Power Electronics Corp. USA
New Split Tab DPAK for Dual MOSFETs Advanced Power Electronics Corp. USA
Discretes from Smith & Associates Smith & Associates
Transistor Kendu International Inc.
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Cascadable amplifier, 1-250 MHz, offers over 1.0-Watt of output power (+28.5 dBm), 4.5 dB noise figure, 10.5 dB gain, and 17 dB reverse isolation; all typical. Typical intermodulation performance: 44 dBm IP3 and 75 dBm IP2. Operating at 15 volts nominal, the amp yields 235 mA DC Current. Comes standard in a 10-pin Gullwing package; contact the factory regarding other package options. (read more)
Cascadable amplifier, 10-600 MHz, offers high efficiency with high gain (32 dB, typical); low noise figure, 2.8 dB typical; and output power 19.0 dBm. Typical intermodulation performance: 33.0 dBm IP3 and 38.0 dBm IP2. Amp operates at 12.0 volts nominal, yielding 95 mA DC Current. Comes standard in a TO-8 package; also available in surface mount, SMTO-8, and SMA connectorized packages. (read more)
The 325LA Amplifier is a rugged source of RF power for HF and VHF transmitters, RFI / EMI testing, plasma equipment and general laboratory applications. Utilizing solid state ruggedized MosFet devices it features an internal RMS power meter and concurrently displays both forward and reverse power. (read more)
Cascadable amplifier, 30-2000 MHz, high output power (1 Watt, 30 dBM, typical); typical gain is 10.8 dB and noise figure is 5.2 dB. Excellent typical intermodulation performance: 42.0 dBm IP3 and 55.0 dBm IP2. Amp operates at 15.0 volts nominal, yielding 370 mA of DC Current. Comes standard in a TO-8B package, but Cougar recommends its Power Pack to aid heat dissipation. (read more)
Cascadable LNA, 650-1200 MHz, offers low noise figure, 1.0 dB; high gain, 31 dB; 12.5 dBm output power, high reverse isolation, 42 dB; all typical. Typical intermodulation performance: 23 dBm IP3 and 35 dBm IP2. Operating at 15 volts nominal, the amp yields only 62 mA DC Current. Comes standard in a TO-8 package; also available in surface mount, SMTO-8, and SMA connectorized packages. (read more)
3200L: 200 Watt Class A Linear power
The 3200L Amplifier is a rugged source of RF power, useful for RFI/EMI, HF and VHF transmitters, plasma equipment, nuclear accelerators and general laboratory applications. The 3200L represents E&I's commitment to providing RF power amplifiers of the highest quality, durability and ruggedness. (read more)
The 2100L Amplifier is a rugged source of RF power, useful for ultrasonics, laser modulation, RFI/EMI, plasma equipment and general laboratory applications. The 2100L represents E&I's commitment to providing RF power amplifiers of the highest quality, durability and ruggedness. E&I's 2100L surpasses the perfromance specifications of the ENI 2100L (read more)
The 1240L Amplifier is a rugged source of RF power for ultrasonics, induction heating and laser modulation as well as plasma applications. It is a totally solid state solution employing RF DMoS FETs in the power amplification stages, offering simultaneous forward and reverse power readouts, and an RS232 port for data collection. (read more)
The A-300 Amplifier is a rugged source of RF power useful for ultrasonics, HF transimitters, RFI/EMI, plasma equipment and general laboratory applications. It delivers 300 Watts of RF power, with 53 dB of power gain over a frequency form 300 KHz to 35 MHz. (read more)
10 kHz - 220 MHz, 100 Watt Solid State Amplifier (read more)
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MOSFET - Wikipedia, the free encyclopedia The metal?oxide?semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. |
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Analog Devices, Inc. | Converters Amplifiers Processors... See Analog Devices, Inc. Information |
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Richardson Electronics Ltd - HOME RF & MW LNA RF & MW Power Amplifier RF & MW VGA RF Power Transistor LDMOS RF Power Transistor MOSFET See Richardson Electronics, Ltd. Information |
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Fairchild Semiconductor - Site Search - MOSFET IC (11) Charge Pump Regulators (4) Comparator (15) Current Sense Amplifier (1) DAC (1) DC/DC Converter (Integrated) (27) DIMM (4) DrMOS (6) Emitting See Fairchild Semiconductor Corporation Information |
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Linear Technology - Linear Home Page High Speed ADCs No Latency Delta Sigma ADCs Power Path Controllers / Ideal Diodes High Side Switches and MOSFET Drivers See Linear Technology Corporation Information |
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APT9501 By: Kenneth Dierberger Bobby McDonald Lee B. Max A... See Microsemi Corp. Information |
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9701 wc See Microsemi Corp. Information |
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Avago Technologies Semiconductors Analog, Mixed-signal and... Four Channel High Speed Transistor Hermetic Power MOSFET High Power LEDs 1W LED Emitter 1W Mini LED Emitter See Avago Technologies Profile & Catalog |
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[No Title] Power Management - Battery Charging and Control - Boost, Buck-Boost Regulators - High Voltage - Linear Regulators - Mobile I/O Companion - PowerWise See National Semiconductor Information |
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[No Title] a single-chip 200V power amplifier driver with integrated Baker Clamp that replaces more than 25 discrete components in high-power audio amplifiers. See National Semiconductor Information |