This antenna provides wide band VHF/UHF frequencies combined into a Single output. (read more)

Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)

Unijunction Transistor (UJTs) from American Microsemiconductor.

The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)

LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)

A FET with an oxide coating between gate and channel is called a MOSFET (metal-oxide semiconductor field effect transistor). (read more)

There are two common types of Omni-directional antennas used at VHF frequencies, whip antennas and rigid antennas. Whip antennas are made from a flexible wire to form a small diameter, flexible dipole. The second type of Omni antenna is a larger rigid dipole. (read more)

The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)

Unijunction Transistor (UJTs) from American Microsemiconductor.

The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)

(PUTs) Programmable Unijunction Transistors from American Microsemiconductor, Inc.

Programmable Unijunction Transistor - PUT's are similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)

Highly sensitive photo transistors for visible light now are available in the high voltage process ModuS U6 developed by PREMA Semiconductor. No additional process layers are necessary for these transistors that can, moderately priced, be integrated into mixed-signal ASICs. (read more)